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A Product Line of
Diodes Incorporated
DMN3730U
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±8
Unit
V
V
Continuous Drain Current
Pulsed Drain Current (Note 6)
Steady
State
T A = 25°C (Note 5)
T A = 85°C (Note 5)
T A = 25°C (Note 4)
I D
I DM
0.94
0.68
0.75
10
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
T J , T STG
0.45
0.71
275
177
-55 to +150
W
W
°C/W
°C/W
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
Thermal Characteristics
100
100
90
80
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T J - T A = P*Rthja (t)
10
R DS(ON)
Limited
I D (A) @
I D (A) @
P W = 1ms
I D (A) @
P W = 100μs
70
P W = 10ms
60
50
1
I D (A) @
P W = 100ms
I D (A) @ DC
40
30
0.1
I D (A) @
I D (A) @
P W = 10μs
20
10
0.01
T J , (Max) = 150°C
T A = 25°C
Single Pulse
P W = 1s
0
0.001
0.01 0.1 1 10 100 1000
0.001
0.01
0.1 1 10
100
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
V DS , DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
2 of 7
www.diodes.com
July 2011
? Diodes Incorporated
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